Abstract
AbstractPhotoluminescence spectra near the exciton region are investigated under the application of external electric fields parallel and perpendicular to epitaxial GaAs surfaces. Quenching of the luminescence is observed and explained in terms of impact ionization of excitons. The emission peaks of the upper (UPB) and lower polariton branches (LPB) shift to higher and lower energy sides, respectively, with increasing the electric fields or the excitation intensity. The calculated peak of the LPB emission is located around 1.515 eV and shifts to higher energy side and dominates the UPB emission, which is contradictory to the present observation. New emission peak appears at 1.515 eV under an application of an electric field in pure samples with carrier concentrations less than 6×1013 cm−3.
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