Abstract
The effect of pulsed electric fields on the magnetophonon structure in the transverse magnetoresistance of n-InSb and n-GaAs at 77 K has been investigated using a magnetic field modulation technique. The damping factor which represents an exponential decay of the oscillation has been deduced for the first time as a function of the total electric field, sum of the applied and Hall field. The damping factor increases with increasing the electric field beyond the threshold value, 100 V/cm for n-InSb and 500 V/cm for n-GaAs. The increase was found to be well explained in terms of the intra-collisional field effect proposed by Barker. The shift of the extremum positions at high electric field was reexamined experimentally and compared with the existing models. Non-parabolicity of the conduction band explains the shift in n-InSb but fails in n-GaAs.
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