Abstract
The microstructure and the crystallization mechanism of amorphous silicon thin films during metal induced lateral crystallization (MILC) under an electric field were investigated. With the applied electric field, the growth rate was enhanced in the anode direction, while it was retarded in the cathode direction. The microstructure of the MILC region under an electric field showed a bi-directional needle network structure, but with an enhanced directionality in the anode direction. The enhanced MILC growth under an electric field was due to the negatively charged Ni-ions, which played a vital role in the 4-step MILC growth mechanism.
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