Abstract
ABSTRACTThe dark capacitive transients related to the main electron trap in bulk and VPE GaAs have been studied in detail. The low temperature low field transients are induced by electrons injected from the metal counter electrode. Both hot electron capture and impact ionization effects are observed. At high fields, a phonon assisted tunneling model accounts for the observations and yields the values of the Franck Condon Shift Sw and the energy w of the phonon coupled to the level. These values are found to be in good agreement with other independent estimates.
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