Abstract
The Nd-Fe-B (tNFB = 30 nm)/[Dy (tDy nm)/Nd (tNd nm)] (tDy/Nd = 20 nm) (thickness tDy = 0–10 nm) thin films were deposited on Al2O3(0001) substrate and subsequently in-situ annealed at 470 °C. As-deposited Nd-Fe-B thin films with a highly perpendicular orientation of c-axis were deposited by introducing bcc-Mo(111) single crystal buffer layer. After post-annealing, the grain size of the Nd-Fe-B/Dy/Nd thin films with the tDy = 10 nm and tNd = 10 nm becomes large due to the Dy and the Nd atoms thermal diffusion, while DyFe2 and Dy oxide compounds are formed in Nd-Fe-B layers, which is confirmed by means of a combination of atomic force microscopy observation and X-ray diffraction measurement. The Hc of Nd-Fe-B/Dy/Nd thin films with the tDy = 10 nm and tNd = 10 nm was approximately the same value of the Nd-Fe-B thin films without Dy/Nd double layer annealed at 470 °C. On the other hand, Hc is enhanced to be about 22.1 kOe in the annealed Nd-Fe-B/Dy/Nd films with the tDy = 0.8 nm and tNd = 19.2 nm.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
