Abstract
The degradation of the off leakage current Ioff in small-dimension pMOSFETs is investigated experimentally while applying a dynamic stress to the pMOSFETs. During the OFF-state stress, the dynamic stress induced an increase of Ioff due to generation of negative oxide charges Nox in the gate dielectric, and in the shallow trench isolation (STI) near the gate edge. When channel width W decreased, negative Nox in STI increase Ioff significantly, and the degradation of Ioff is more critical than degradation of Vth. These observations indicate that the effect of the dynamic stress in pMOSFETs on Ioff should be seriously considered when evaluating small-dimension pMOSFETs.
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