Abstract
The Alexander-Haasen theory of deformation in semiconductor crystals with low dislocation density was generalized by taking into account the effect of dynamic aging of dislocation caused by the impurity drag. The generalized theory explains some qualitative distinctions of the elastic-plastic transition in Czochralski-grown Si crystals from that in crystals of higher purity. Particularly, this concerns the dependence of the height of the yield-point peak on the initial dislocation density and the weakening of the strain-rate sensitivity of the yield stress.
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