Effect of dry etching on surface properties of III-nitrides

Abstract

Dry etched InAlN and GaN surfaces have been characterized by current-voltage measurement, Auger electron spectroscopy, and atomic force microscopy. Electron cyclotron resonance discharges of BCl3. BCl3/Ar, BCl3/N2, or BCl3/N2 plus wet chemical etch all produce nitrogen surfaces that promote leakage current in rectifying gate contacts, with the BCl3/N2 plus wet chemical etch producing the least disruption on the surface properties. The conductivity of the immediate InAlN or GaN surface can be increased by preferential loss of N during BCl3 plasma etching, leading to poor rectifying contact characteristics when the gate metal is deposited on this etched surface. Careful control of plasma chemistry, ion energy, and stoichiometry of the etched surface are necessary for acceptable pinch-off characteristics. Hydrogen passivation during the etch was also studied.