Abstract
Si/NiFe bilayer structures are very effective to obtain c-axis orientation in both a Ru intermediate layer and a CoPtCr-SiO2 recording layer when they successively deposited on the Si/NiFe bilayer. Doubly layered Ru which consists of two Ru layers prepared at low and high sputtering gas pressures promoted c-axis orientation and well-isolated grains of the CoPtCr even when the Ru intermediate layer was very thin. Doubly layered Ru intermediate layers deposited on Si/NiFe seed layers attained suitable c-axis orientation and well-isolated grains of the CoPtCr recording layer, even though the Ru double-layer was as thin as 5 nm.
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