Abstract
A tunneling magneto-resistance (TMR) ratio of ∼163% at an annealing temperature of 400 °C was achieved in a single MgO-based perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a tungsten (W)/tantalum (Ta) seed and W capping layer instead of with a Ta seed and capping layer. This was done by improving the interface perpendicular magnetic anisotropy (i-PMA) characteristic of the Co2Fe6B2 free layer and face-centered-cubic (f.c.c.) crystallinity of the MgO tunneling barrier. In particular, a TMR ratio of ∼141% at an annealing temperature of 400 °C and a thermal stability at room temperature of ∼61 were achieved in a double MgO-based p-MTJ spin valve with W/Ta seed, W spacer, and W capping layers by doubling the i-PMA magnetic moment and increasing slightly magnetic anisotropy field (Hk).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
