Abstract
The effect of the double layers formation on the gas-phase composition of SiH 4 /H 2 discharges and the deposition rate of microcrystalline silicon thin films has been investigated by applying mass spectrometric and film growth measurements. Spatially Resolved Optical Emission Spectroscopy has been used for the detection of the appearance of this additional electron heating mechanism that in the present conditions results from the variation of either the discharge power or the total gas pressure. The experimental results have been in all cases combined to a gas phase and surface simulator of SiH 4 /H 2 discharges allowing thus the discussion for the rather limited effect of this mechanism on the deposition process of μc-Si:H thin films.
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