Abstract
A double-layered Al2O3/SiO2 dielectric structure was applied to In–Ga–Zn–O-based amorphous thin film transistors through the atomic layer deposition (ALD) of aluminum oxide combined with thermally grown SiO2 dielectrics. The presence of ALD-based Al2O3 increased the on/off current ratio, decreased the sub-threshold slope, and decreased the threshold voltage. However, the addition of Al2O3 increased the turn-on voltage and slightly and adversely decreased the mobility. The device features appear to be associated with the presence of high-k Al2O3, which results in newly formed interfaces, oxide integrity, and high charge storage capabilities. The performance of the optimized thin film transistor is shown with the 50nm Al2O3/50nm SiO2 dielectric structure, which has a threshold voltage of 8.67V, a turn-on voltage of 5.09V, an on/off current ratio of 5.12×109 and a sub-threshold slope of 0.23V/decade.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
