Abstract
The effect of sulfur, iron, and chromium doping on the electrical characteristics of ZnSe single crystals was studied. The crystals, grown by the physical vapor transport method (PVT) at NASA Marshall Space Flight Center, were characterized by measuring electrical resistivity, capacitance, and dielectric constant using LCR meter. The morphology was studied by scanning electron microscopy to determine the crystallinity and micro defects. The measured resistivity and dielectric constant showed tunability as the function of frequency in the range of 100 Hz to 100,000 Hz, indicating the suitability of doped material for tuning devices. Besides, for the range from 50 mV to 1000mV, there was no difference in values for the studied frequency range, indicating no degradation or breakdown in the material. All doped ZnSe crystals with sulfur, iron, and chromium showed a similar trend as the function of frequency. Cr-ZnSe showed very high resistivity and lower dielectric constant compared to S-ZnSe and Fe-ZnSe crystals.
Highlights
Since past eight decades, binary and ternary selenides, ZnSe, have proven as an excellent multifunctional material for multiple applications, including high power lasers operating in the ranges of mid-wave infrared (MWIR) and long-wave infrared (LWIR), surveillance, windows, hyperspectral imagers, coatings, and environmental monitoring
Large ZnSe crystals have been grown by vapor transport method, and attempts have been made to develop to control homogeneity in large crystals by controlling thermal and solutal convection during a variety of crystal growth [7,8,9,10,11,12,13] to understand the effect of microgravity
We studied dielectric constant and resistivity of sulfur, iron, and chromium-doped large single ZnSe crystals grown by physical vapor transport method (PVT)
Summary
Binary and ternary selenides, ZnSe, have proven as an excellent multifunctional material for multiple applications, including high power lasers operating in the ranges of mid-wave infrared (MWIR) and long-wave infrared (LWIR), surveillance, windows, hyperspectral imagers, coatings, and environmental monitoring. Large ZnSe crystals have been grown by vapor transport method, and attempts have been made to develop to control homogeneity in large crystals by controlling thermal and solutal (impurity) convection during a variety of crystal growth [7,8,9,10,11,12,13] to understand the effect of microgravity. For the ZnSe applications in the area of laser development, two major approaches have been used—(a) utilizing the rare-earth or transition metal-doped bulk single crystals and (b) thick film of ZnSe on lattice-matched substrates entitled as quasi-phase materials (QPM) [14,15]. Studies to understand the role of convection in doped crystals [8,9,13] have provided
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