Abstract
Positron lifetime distribution measurements in Si crystals (using both float-zoned and Czochralski crystals), intrinsic and with different dopings, have been made using approximately 0.290 ns (FWHM) prompt time resolution with approximately 37 ps slope and 40000:1 peak-to-background ratio. The general trend of the time spectra essentially consists of a single exponential component tau 1(0.223-0.245 ns). Because of the extra care taken in the source sample preparation the intensity, I2, of the long component ( approximately 1 ns) was kept <0.2% in all the cases investigated and was assigned to source sample effects. Although no difference in lifetime was observed between various kinds of doped crystals, the lifetime values in the intrinsic Si crystals were found to be consistently lower than in the doped ones by approximately 6-9%, the experimental error being approximately 2%. This effect has been detected, possibly for the first time.
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