Effect of doping on metal doped semiconductor

Abstract

The effect of doping on position of interface states for metal doped bathocuproine (BCP) was studied with density functional theory (DFT). The doping of Ca atoms with BCP induces the formation of interface states with shift in their relative positions from Fermi level and approximately no shift in HOMO position of BCP molecule. The shift in the position of interface states towards higher binding energy was believed to be due to the presence of doping excess electrons from Ca at the interface. The analysis of modification in intensity of LUMO or E F or interface states, suggests the formation of multiply charged anions in heavily doped film. It clearly gives the direct evidence for the origin of the doping interface states in organic molecules. The effects of Ca doping on electrical properties were discussed.