Abstract
The effects of sintering temperature and doping amount of gadolinium ions on the microstructures and electrical properties of sol gel derived Ba (Zr0.1Ti0.9) O3 + xGd ceramics were investigated in this manuscript. XRD analysis showed that the main crystalline phase of BZT-xGd ceramic samples exhibit a perovskite structure without significantly change. The sample sintered at 1350 °C and doped with gadolinium ions of 0.5 mol% has uniform grain size and compact morphology. And the sample(1350 °C—0.5 mol%) also has a high piezoelectric charge coefficient of 131.33 pC/N, large plane electromechanical coupling coefficient of 0.22, high dielectric constant of 10504, and small dielectric loss of 0.01. The correlation of dielectric and piezoelectric properties of BZT-xGd ceramics with doping amount of Gd3+ ion has been explained by the lattice theory.
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More From: Journal of Materials Science: Materials in Electronics
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