Abstract
We report the effect of doping fluorine in the offset region on the performance of coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The TFTs with 4-μm offset length at both sides of the gate were fabricated. Hall mobility of the offset region a-IGZO increases, and its resistivity (ρ) decreases with increasing F doping concentration. The TFTs with 7 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">19</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> carrier concentration in the offset region exhibit the field-effect mobility of 27.17 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V· s. The fabricated 23-stage ring oscillator (RO) shows an oscillation frequency of 2.27 MHz at the supply voltage of 20 V with a propagation delay of 9.5 ns/stage, which
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