Abstract
Ag alloy wire of high Ag content showed the lower cost and resistivity than the 88%Ag, 95%Ag and 96%Ag alloy wires. In this study, the Au, In, Ni and Cu elements were doped in Ag-2.0%Pd alloy to form the ternary Ag-Pd-Au, Ag-Pd-In, and quaternary Ag-Pd-Au-Ni, Ag-Pd-Au-Cu alloy wires. The interfacial reactions of the Ag alloy wires were investigated after HTST and TCT reliability tests. These tests show that Ag-Pd-In and Ag-Pd-Au-Ni alloy wires exhibit excellent reliability performance. The high Ag content Ag 2 Al and Ag 3 Al IMCs trend to form at the Ag-Pd-In/Al, Ag-Pd-Au-Ni/Al and Ag-Pd-Au-Cu/Al interfaces after prolonged HTST test for 2000 h. However, the Ag 3 Al 2 compound is formed at the Ag-Pd-Au/Al interface after HTST test for 2000 h. The elemental dopant can diffuse from Ag alloy wire to the interface and dissolved in the intermetallic compound after prolonged tests. The interface of failed Ag-Pd-Au-Cu and Ag-Pd-Au ball bonds showed the formation of cracks at the Ag ball bonds/Ag 3 Al 2 IMCs interfaces. The crack may be the path for the diffusion of chloride ion and sulfate ion from the molding compound to cause the interfacial oxidation.
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