Abstract

Pure and tin doped zinc oxide (Sn:ZnO) thin films were prepared for the first time by NSP technique using aqueous solutions of zinc acetate dehydrate, tin (IV) chloride fendahydrate and methanol. X-ray diffraction patterns confirm that the films are polycrystalline in nature exhibiting hexagonal wurtzite type, with (002) as preferred orientation. The structural parameters such as lattice constant (‘a’ and ‘c’), crystallite size, dislocation density, micro strain, stress and texture coefficient were calculated from X-ray diffraction studies. Surface morphology was found to be modified with increasing Sn doping concentration. The ZnO films have high transmittance 85% in the visible region, and the transmittance is found to be decreased with the increase of Sn doping concentration. The corresponding optical band gap decreases from 3.25 to 3.08eV. Room temperature photoluminescence reveals the sharp emission of strong UV peak at 400nm (3.10eV) and a strong sharp green luminescence at 528nm (2.34eV) in the Sn doped ZnO films. The electrical resistivity is found to be 106Ω-cm at higher temperature and 105Ω-cm at lower temperature.

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