Abstract
Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol–gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473Ωcm for the 4at% of nitrogen (N) doping with a mobility of 1.995cm2/Vs. The NZO thin films showed p-type conductivity at 2 and 3at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10kHz to 0.1MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.
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