Effect of doped heteroatom on monolayer SnSe2 adsorption of Na

Abstract

Based on the first principles, we have calculated the influence of B, Br, and N atom doping on the adsorption properties and optoelectronic properties of monolayer SnSe2 adsorbed Na. The calculations show that vacancy is the most favorable adsorption site for the Na atom. Among the three doping systems, the B-doped system has the best adsorption energy and height and Na’s adsorption capacity. After the adsorption of the Na atom by intrinsic SnSe2, the system behaves from a semiconductor to a metal nature. Doping Br atom increases the adsorption system’s Fermi energy level, the conduction band’s overall energy increases and the electrical conductivity is enhanced. Doping B and N atoms change the adsorption system from metallic to p-type semiconductor properties. The system’s adsorption performance, electrical conductivity, and energy band tunability are improved. Due to the electrostatic repulsion between Na atoms, the adsorption energy of the system shows an increasing trend with the increase in the number of adsorbed Na atoms on the surface. The maximum specific capacity of the surface of the doped system is 373 mAhg−1, and the system has high storage capacity. Optical property calculations show that the static refractive index of the Br-doped adsorption system is maximum. The static refractive index of the doped adsorption system is minimal. Doping makes the system’s energy loss smaller, complex conductivity decreases, intermolecular interactions decrease, and the adsorption system becomes more stable.