Abstract
Ba(Zn1/3Ta2/3)O3 has been prepared with different dopants that gave best microwave dielectric properties at room temperature. Effects of different dopants on the low temperature microwave dielectric properties of BZT were investigated. With decrease in temperature, loss tangent was found to decrease marginally and then increase at temperatures lower than 100 K. Increase in loss factor at lower temperatures were found to be less for dopants with smaller ionic radii. Dielectric constant was found to be almost independent of temperature. Temperature coefficient of resonant frequency slowly decreased from a positive value to negative value when temperature was lowered. Temperature at which τf becomes zero was found to vary for different dopants. There is a temperature stable region for tanδ, ɛr and τf which varies for different dopants.
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