Abstract
We investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates. We found that addition of boron with a B:Si feed-in atomic ratio greater than 1:1000 improved the percentage of Si NWs grown along the vertical <111> direction to more than 90%, compared to 38% for i-Si NWs. We also demonstrated a stemmed growth strategy and achieved a 93% percentage of i-Si NW segments along the vertical <111> direction on Si substrates. In summary, our study opens up potential for using chemical synthesized vertical Si NW arrays integrated on Si substrates for large-scale applications.
Highlights
Silicon nanowires (Si NWs) have been demonstrated to work as building blocks for applications in electronics, optoelectronics, energy conversion, energy storage and sensing [1, 2]
We have developed a stemmed strategy in which i-Si NW segments are grown on B-doped Si stems through axial dopant modulation [23]
We have investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates
Summary
Silicon nanowires (Si NWs) have been demonstrated to work as building blocks for applications in electronics, optoelectronics, energy conversion, energy storage and sensing [1, 2]. Vertical Si NW arrays on Si substrates are a desirable configuration as it can be used directly for potential three-dimensional applications, avoiding the time and cost required for post-growth alignment [5, 6]. To this end, epitaxial growth of Si NWs along the vertical direction on Si (111) substrates is of particular interest, as the (111) plane is the lowest energy plane observed for Si, and growth along the direction epitaxially on Si (111) substrates is preferred [7,8,9,10], leading to high-yield vertical Si NW arrays. Si NWs on Si (111) substrates, and demonstrate a strategy to improve the vertical growth yield in a Si NW array by exploiting doping effects
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