Abstract
Al and Ti doped ZnO thin films have been prepared by direct current magnetron cosputtering and thermal oxidation. The effects of these dopants on the microstructural, morphological and electrical properties of deposited films have been studied. The SEM demonstrated that the undoped ZnO thin film consisted of globular ZnO with particle size of ∼100 nm. Scanning electron microscopy EDX analysis confirmed that the dopant content in the ZnO–Al and ZnO–Ti thin film was 2·78 and 3·75 at-% respectively. The particle in the ZnO–Ti thin film was blocky or granular with thorns and its size was several micrometers, while the particle in ZnO–Al thin film was porous granular and the size was ∼2 μm. Resistance value testing and R/R calculation revealed that pure ZnO thin film had the highest gas sensitivity.
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