Abstract
Metal oxide nanomaterials have been attracting growing interest for large domains applications such as gas sensors, photocatalysts, solar cell and UV photodetectors. In this works, the undoped and F, Al, Zn (3 at%) doped SnO2 thin films were successfully deposited by sol-gel dip coating technique and characterized by X-ray diffraction (XRD), UV–Visible spectroscopy and photoconductivity study. Structural analysis showed that all films are polycrystalline with tetragonal rutile structure where the crystallite size is calculated by the debye Scherer’s formula and it was obtained in the range of 6.49 to 9.33. Optical transmittance spectra of the films showed high transparency (>80%) in the visible range and gap energy values were obtained in the range 3.93 to 3.99. Finally, the variation of photocurrent with voltage and with time has been studied under UV illumination (λ = 365 nm). The high photocurrent is observed using F-doped SnO2 sample while the film doped with Al had the highest photosensitivity. Current-Voltage characteristics of dark and photo current exhibited linear behavior. The phenomena of photoconductivity in SnO2 thin films were interpreted by chemisorptions of oxygen molecules on the surface.
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