Abstract
The photoluminescence properties of aluminum(Al)-doped ZnTe layers grown by atmospheric pressure metalorganic vapor phase epitaxy have been investigated as a function of triethylaluminum (TEAl) transport rate. With increasing dopant transport rate, the excitonic emission and donor-acceptor-pair emission associated with Al donor becomes striking in the spectrum whereas the deep emission band due to the Zn vacancy and Al donor complex retains a weak intensity, implying that Al is well incorporated into the ZnTe layer. However, several excitonic emissions arising from impurity-related acceptors become predominant in the spectrum of the layer grown under the condition above a TEAl transport rate of 0.1 μmol/min. We have obtained the n-type layer with a resistivity of 2 Ω cm and a carrier concentration of 10 17 cm −3 at a THAI transport rate of 0.1 μmol/min.
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