Abstract
The frequency and temperature dependences of the real and imaginary parts of the permittivity of Cr-doped (nCr ≅ 1018 cm−3) melt-grown ZnSe crystals have been measured in the low-frequency region. It has been established that such doping reduces the heterogeneity of the dielectric properties and the level of energy losses of ac electric field in a crystalline ingot. The effect of dopant atoms on the dielectric properties has been explained as being caused by formation of defect associates with participation of these atoms and intrinsic crystal defects.
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