Effect of dopant concentration on visible light driven photocatalytic activity of Sn1-xAgxS2.

Abstract

Tin(iv) sulfide (SnS2), as a mid-band-gap semiconductor shows good potential as an excellent photocatalyst due to its low cost, wide light spectrum response and environment-friendly nature. However, to meet the demands of large-scale water treatment, a SnS2 photocatalyst with a red-shifted band gap, increased surface area and accelerated molecule and ion diffusion is required. Doping is a facile method to manipulate the optical and chemical properties of semiconductor materials simultaneously. In this work, SnS2 photocatalysts with varied Ag doping content are synthesized through a facile one-step hydrothermal method. The product is characterized by XRD, SEM, TEM and UV-Vis spectrometry. The photocatalytic activity of the as-prepared Sn1-xAgxS2 is studied by the degradation of methylene blue (MB) dye under solar light irradiation. It is found that increasing the Ag dopant concentration can effectively increase the solar light adsorption efficiency of the photocatalyst and accelerate heterogeneous photocatalysis. The optimal concentration of Ag dopant is found to be 5% with the highest rate constant being 1.8251 hour-1. This study demonstrates that an optimal amount of Ag doping can effectively increase the photocatalytic performance of SnS2 and will promote the commercialization of such photocatalysts in the photocatalytic degradation of organic compounds.