Effect of Dopant Concentration in a Base Layer on Photocurrent–Voltage Characteristics of Photovoltaic Power Converters**Supported by the National Natural Science Foundation of China (Grant Nos. 61704008 and 11574362) and the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB33000000).

Abstract

It is known that the p–n junction of an absorption region is a crucial part for power conversion efficiency of photovoltaic power converters. We fabricate four samples with different dopant concentrations in base layers. The dependences of power conversion efficiency and fill factor on input power are displayed by photocurrent–voltage measurement. Photoluminescence characteristics under open circuit and connected circuit conditions are also studied. It is found that the status of p–n junction matching is the critical factor in affecting the power conversion efficiency. In addition, series resistance of photovoltaic power converters impairs the efficiency especially at high input powers. Both the key factors need to be considered to obtain high efficiency, and this work provides promising guidance on designing photovoltaic power converters.