Abstract
The fabrication process has been modified to stabilize the product due to the miniaturization of the semiconductor. It is also necessary to change the material in accordance with the change in the manufacturing process. In this study, we systematically examine the problems caused by the increase of dissolved oxygen in the etching process of polysilicon through single tool equipment. To overcome this issue, surfactant and oxygen scavenger were exploited not only to reduce the surface roughness but also to increase the etch rate.
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