Abstract
Disorders acquainted in semiconductor quantum structures can change the crystal potential and thus play an important role in the performance of optoelectronic devices. Such disorders are critical in the performance of InAsP/InP quantum well devices, which are useful for telecommunication applications. These disorders originate due to the difference in adsorption and the sticking coefficient of arsenic and phosphorus. In our previous paper [J. Appl. Phys.119, 095708 (2016)JAPIAU0021-897910.1063/1.4943031], we reported the impact of carrier localizations on the performance of InAsP/InP quantum well detectors. In this work, the magnetic field is used to investigate exciton properties in InAsP/InP quantum wells. Line shape analysis of magneto-photoluminescence (magneto-PL) distinguishes the role of disorders on the excitonic properties that are useful for the identification of sample quality. Furthermore, the blue shift in PL peak energy with an applied magnetic field is used to estimate the effective mass of excitons in InAsP/InP quantum wells. The estimated effective mass of excitons confined in the quantum well is significantly higher than that of the corresponding bulk value, which is explained by considering the non-parabolicity of the conduction band. The non-parabolicity parameter is also estimated and used for obtaining the electron dispersion E-k curve for InAsP/InP quantum wells.
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