Abstract
The influences of random disorder in the barrier on tunnel conductance (TC) and magnetoresistance (TMR) in ferromagnet (FM)/insulator (semiconductor) (I(S))/FM junctions are investigated theoretically taking into account spin-orbit (SO) interaction. The TMR decreases significantly due to the spin-flip scattering (SF) caused by the SO interaction. We have found that the SF scattering is much stronger for anti-parallel configuration of magnetization and the TMR can even be inverted when the SF scattering is beyond some critical value. The numerical calculations are performed within the single-orbital tight-binding model using the recursive Green’s function method based on the extended Landauer–Büttiker formula.
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