Effect of dip-coating cycle on some physical properties of Cu2NiSnS4 thin films for photovoltaic applications

Ahmed Ziti,Bouchaib Hartiti,Mounia Tahri,Philippe Thevenin,Amine Belafhaili,Salah Fadili,Hicham Labrim,Abderraouf Ridah

doi:10.1007/s10854-021-06230-9

Abstract

Quaternary semiconductor Cu2NiSnS4 thin film was made by the sol–gel method associated with dip-coating technique on ordinary glass substrates. In this paper, we have studied the impact of dip-coating cycle at different cycles: 4, 5 and 6 on the structural, compositional, morphological, optical and electrical characteristics. CNTS thin films have been analyzed by various characterization techniques including X-ray diffractometer (XRD), Raman measurements, scanning electron microscope (SEM), energy-dispersive X-ray spectroscope (EDS), UV–Visible spectroscopy and four-point probe method. XRD spectra demonstrated the formation of cubic Cu2NiSnS4 with privileged orientation at (111) plane. Crystallite size of cubic CNTS thin films increases from 6 to 9 with augmentation of dip-coating cycle. Raman scattering confirmed the existence of CNTS thin films by Raman vibrational mode positioned at 332 cm−1. EDS investigations showed near-stoichiometry of CNTS sample deposited at five cycles. Scanning electron microscope showed uniform surface morphologies without any crack. UV–Vis spectroscopy indicated that the optical absorption coefficient values are larger than 104 cm−1. Estimated band gap energy of CNTS absorber layers decreases from 1.64 to 1.5 eV as dip-coating cycle increased. The electrical conductivity of CNTS thin films increases from 0.19 to 4.16 \(\left( {{\Omega }\;{\text{cm}}} \right)^{ - 1}\). These characteristics are suitable for solar cells applications.

Highlights

The costly and scarcity of galium (Ga) and indium (In) and toxicity of cadmium (Cd) limited the future of high efficient copper indium gallium sulphur Cu2InGaS2 and cadmium telluride CdTe absorbers materials [1,2]
Broad peaks are located at 2θ around 28.45°, 32.56° and 47.48° matching respectively to (111), (200) and (220) planes, the high intensity of peak located at 28.45° of showed privileged direction along (111) plane, the preferentially direction of (111) plane and peaks corresponding proved the formation of cubic CNTS phase corresponding to (JCPDS card No.00-026-0552)
No other additional phases are presented in the films deposited at 4 cycles and 5 cycles, we have shown the formation of NiS secondary phase in the film deposited at 6 cycles, the formation of this phases is probably due to high quantity of nickel (Ni) in sample dip-coated at 6 cycles, the high adhesion of Ni compared to Sn for this film lead the Ni allied with sulphur (S) due to high electronegativity of this chemical element

Summary

Introduction

The costly and scarcity of galium (Ga) and indium (In) and toxicity of cadmium (Cd) limited the future of high efficient copper indium gallium sulphur Cu2InGaS2 and cadmium telluride CdTe absorbers materials [1,2].

Results

Conclusion