Abstract
Three-dimensional (3D) topological insulator (TI) has emerged as a unique state of quantum matter and generated enormous interests in condensed matter physics. The surfaces of a 3D TI consist of a massless Dirac cone, which is characterized by the Z2topological invariant. Introduction of magnetism on the surface of a TI is essential to realize the quantum anomalous Hall effect and other novel magneto-electric phenomena. Here, by using a combination of first-principles calculations, magneto-transport and angle-resolved photoemission spectroscopy (ARPES), we study the electronic properties of gadolinium (Gd)-doped Sb2Te3. Our study shows that Gd doped Sb2Te3is a spin-orbit-induced bulk band-gap material, whose surface is characterized by a single topological surface state. Our results provide a new platform to investigate the interactions between dilute magnetism and topology in magnetic doped topological materials.
Highlights
In topological quantum materials (TQMs), the interplay of magnetism and topology can give rise to profoundly alluring phenomena including quantum anomalous Hall effect (QAHE), topological electromagnetic dynamics, and generate new states such as magnetic Dirac and Weyl semimetals, axion insulators, etc. (Hasan and Kane, 2010; Li et al, 2010; Qi and Zhang, 2011; Hasan et al, 2015)
We use detailed magnetic, electrical transport, and ARPES measurements together with DFT calculations to study the electronic structure of the Gd-doped Sb2Te3 topological insulator
The magnetic and transport measurements show that Gd doping gives rise to local magnetism with CurieWeiss-like behavior of the magnetic susceptibility and show some indications of possible magnetic ordering at 2.4 K
Summary
In topological quantum materials (TQMs), the interplay of magnetism and topology can give rise to profoundly alluring phenomena including quantum anomalous Hall effect (QAHE), topological electromagnetic dynamics, and generate new states such as magnetic Dirac and Weyl semimetals, axion insulators, etc. (Hasan and Kane, 2010; Li et al, 2010; Qi and Zhang, 2011; Hasan et al, 2015). A new magnetic topological insulator has been theoretically proposed and later experimentally realized in thin-films and single crystals of MnBi2Te4 (Chen et al, 2019; Li et al, 2019; Otrokov et al, 2019; Zhang et al, 2019) This system possesses a long-range antiferromagnetic (AFM) order and contributes a pragmatic platform to understand many compelling phenomena and phases, such as QAHE (Deng et al, 2020), axion insulator phase (Liu et al, 2020; Regmi et al, 2020), high number Chern insulator (Ge et al, 2020), and AFM TIs (Otrokov et al, 2019). To realize the QAHE, very low temperatures are needed to enhance the magnetic moments and suppress bulk dissipation channels, improved materials are required (Kou et al, 2014) To address this challenge, we utilize magnetism of 4f-electron elements as an alternative to 3d transition metals to dope the topological material. More studies are required to draw any firm conclusions on the nature of the low-temperature behavior in this material
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