Abstract
This study is a theoretical investigation on transport properties of heterostructures-consisting of double rough barriers. The interfaces of barriers are presented with two different types of rough interfaces. These interfaces are produced by the pure random deposition and ballistic deposition on two-dimensional substrates. The resonant transport for two types of interfaces are studied and compared with each other. In addition, the I–V characteristic for different interface-roughness types and for different temperatures is investigated. The results illustrate that both the transmission probability and the current density depend on deposition model and interface morphology.
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