Abstract
We have analyzed the mid-infrared SiGeSn based Barrier-Well-Barrier Heterostracture and calculated the transparency carrier density and corresponding current density for the structure. The effects of different loss mechanisms like free carrier absorption, spontaneous recombination and Auger recombination processes on the transparency current density have been examined. It is shown that, the transparency current density increases significantly with the injected carrier density. Different scattering processes like acoustic phonon scattering and intervalley optical phonon scattering are taken into consideration for this analysis of free carrier absorption mechanisms.
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