Abstract
Some specific designs on band structure near the active region, including the modifications of the material and thickness of the electron blocking layer (EBL), in the deep violet InGaN laser diodes (LDs) are investigated numerically with the ISE TCAD software. The analyses focus on electron and hole carrier injection efficiency, carrier distributions, electron leakage, and radiative recombination, subsequently, optical material gain, and optical intensity. The results indicate that for the ternary AlGaN EBL, the lowest threshold current and the highest output power, slope efficiency, and DQE have been obtained for the 15nm EBL thickness with 0.22 Al mole fraction. In addition, a comparative study has been conducted on the performance characteristics of the LD structures with a ternary AlGaN EBL and a quaternary AlInGaN EBL with an output emission wavelength at 390nm. The simulation results showed that the using quaternary AlInGaN EBL effectively improves the LD performance characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
