Abstract
The morphological and optical characterizations of porous silicon carbide (PSC) were studied after photo-electrochemical etching of silicon carbide (SiC) substrates using various current densities. Atomic force microscopy results demonstrated that the current density is an outstanding parameter that controls the morphology of pores. The Raman intensities of the PSC samples with higher current densities were enhanced because of the increase in the specific surface area. An evident red-shift in the position of the A1 (LO) mode of phonon vibrations was observed compared with that of non-porous crystalline 6H-SiC. These results show that tensile stress was induced in PSC nanocrystallites.
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