Abstract
As the main additive, complexing agent can effectively improve the removal rate of copper film during chemical mechanical polishing(CMP) process, so the basic research of the effects of F A/OII chelating agent, ethylenediamine(EDA) and glycine(GL Y) as complexing agent on removal rate and surface quality of copper and cobalt for low tech-node were performed. The experimental results showed that all three complexing agents can achieve higher copper removal rates and lower cobalt removal rate. EDA has the highest removal rate of copper and serious surface corrosion. It was found the slurry with glycine can be stable for three days, which can meet the needs of industrial production.
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