Abstract
Y3(Al,Ga)5O12:Tb thin films have been prepared on SiO2/Si (100) substrates by using pulsed laser deposition. The deposited films were annealed in air at 800°C, 900°C and 1000°C. Atomic force microscopy, X-ray diffraction, photoluminescence, X-ray photoelectron spectroscopy and Nano-scanning Auger electron microprobe (NanoSAM) techniques have been applied to characterize these films. The results were compared with those of previously investigated Y3(Al,Ga)5O12:Tb thin films on Si (100) without an oxide (SiO2) layer. No change in photoluminescence (PL) excitation bands as a result of post-annealing was observed. Enhancement of PL intensities was observed as a function of annealing temperatures which was attributed to the improvement in crystallization of the films with an increase in annealing temperature. Annealing caused stress in the films and aggravated cracking occurred. Diffusion occurred, leading to phase changes and changes in stoichiometry. There were regions with enriched Si after annealing at higher temperatures.
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