Abstract
Armed with four different steady-state collisional-radiative (CR) models, we investigated the effect of dielectronic recombination (DR) on the charge-state distribution in laser-produced silicon plasma. To assess this effect, we performed a series of temporally resolved spectra of highly charged Si ions in the extreme ultraviolet region. Ab initio calculations of the DR rate coefficients were done for Si6+–Si4+ ions. We also analyzed the evolution of the collisional ionization, radiative recombination, three-body recombination, photo-ionization, and DR rate coefficients as a function of electron temperature. The electron temperature and electron density for different delay times were obtained by comparing the normalized experimental and simulated spectra. The ion fraction and average charge state from the four different CR models were also obtained. The results indicate that the DR process has a greater influence in the stage of plasma evolution that cannot be neglected in plasma diagnoses.
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