Abstract
In this research paper, performance characteristics of the various operating modes of dual gate organic field effect transistors (DG-OFETs) are analyzed Comparative analysis between single-gate and dual-gate OFETs is carried out. Further, effect of gate dielectric thickness (t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</sub> ) variations ranging from 100nm to 200nm is investigated. Observations reveal that the electrical characteristics are strongly affected by the dielectric thickness. It has been observed that the percentage improvement in the current on-off ratio is 95.4% and transconductance is reduced by 40.5% with variation in dielectric thickness.
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