Abstract
It is shown that dielectric coatings (SiO2, Si3Ni4) with rectifying Pd-GaAs contacts in “windows” have a significant effect on the low temperature (77°K) current-voltage characteristic (CVC). Potential barrier height decreases and the idealness index of the CVC increases. The effect is more intense the greater the metallization thickness. For an Au-GaAs contact the effect is absent even at a metal thickness >1 μm. A possible cause of this effect at low temperature is the action of mechanical stresses about the contact periphery.
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