Abstract

Understanding the mechanism of dielectric breakdown is important for improving the breakdown field of a polymer. In this work, dielectric barrier discharge (DBD) treatment was applied to one surface of P(VDF-CTFE) (vinylidene fluoride-chlorotrifluoroethylene) film, and the dielectric properties of the film were studied. When the treated surface was connected to the high potential side of the power source for the breakdown test, the breakdown field of the treated film was significantly reduced compared to that of the pristine film. Based on the characterization results for the surface chemistry and morphology, it was proposed that the phenomenon was caused by the combined effects of hole injection from the metal electrode and the damage of polymer chains near the surface of the polymer film after the DBD treatment process.

Highlights

  • There is growing demand for dielectric materials with high energy density for capacitor applications

  • For P(VDF-CTFE), the dielectric breakdown breakdown strength is about 473.97 MV/m, which is consistent with the results reported in the strength is about

  • We found that the dielectric field of the treated film is dependent on which surface is connected to the high potential side of the high voltage power supply used for the breakdown test

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Summary

Introduction

There is growing demand for dielectric materials with high energy density for capacitor applications. Dielectric polymers have the advantages of being light-weight, easy to process and low cost and of having a high breakdown strength, and the materials are an important class of materials for energy storage applications [3,4,5,6]. Dielectric barrier discharge (DBD) treatment is a high voltage gas discharge method with. Dielectric barrier discharge (DBD) treatment is a high voltage gas discharge method with non‐thermal plasma at atmospheric pressure [16,17]. In this method, a dielectric barrier is used in the non-thermal plasma at atmospheric pressure [16,17].

Materials and Methods
Results and and Discussion
The surfaceSEM
The in dielectric strength of the pristine and the film underon results
Weibull
Conclusions
Full Text
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