Abstract
This study reports the transfer of InGaN light-emitting diodes (LEDs) embedded with and without a diamond like carbon (DLC) layer to Si substrates. It also investigates the heat dissipation and output power performance after the addition of the DLC layer. The LED device with a DLC layer had a lower thermal resistance (13.2 K/W) and surface temperature (55.51-65.34 °C at 700 mA) than that without a DLC layer. This likely resulted from the fast heat dissipation of the DLC layer in both vertical and horizontal directions. The LED device with a DLC layer achieved a 20.8% improvement in output power.
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