Abstract
Abstract Germanium-carbon (Ge1‐xCx) coatings have been prepared by plasma enhanced chemical vapor deposition (PECVD). The effects of different deposition parameters, including flow rate ratios of GeH4:CH4 precursors, RF power and deposition pressure, on the microstructure and deposition rate were investigated. Microscopic investigation and surface topographic evaluation of coatings were performed using field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the germanium-carbon coatings exhibit a completely dense structure without any pores, cracks and non-uniformity. The results indicated that the deposition rate of coatings had a direct proportion to deposition pressure and GeH4:CH4 flow ratio. Whereas, with increasing the RF power, the deposition rate firstly increased and then decreased. The surface topographic investigation revealed that the surface roughness of coatings was remarkably dependent on the deposition rate and plasma etching effects.
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