Effect of deposition parameters on the deposition characteristics of chemically vapour deposited PbTiO 3

Abstract

PbTiO 3 was deposited onto titanium substrates by a chemical vapour deposition (CVD) process involving the application of gas mixtures of lead, Ti(C 2H 5O) 4 and oxygen. The effects of the deposition temperature, the gas flow rate and the composition of reactant gases on the deposition rate, preferred orientation and the surface morphology of the PbTiO 3 deposit were studied. The CVD of PbTiO 3 is a thermally activated process and limited by the surface chemical reaction. The apparent activation energy is about 21.8 kcal mol −1. The deposition rate of PbTiO 3 and the crystal growth along the (001) preferred orientation are increased with an increase in the deposition temperature. The crystal size of the PbTiO 3 deposit is increased with increasing deposition temperature and the gas flow rate of the reactant gases and is decreased with increasing Ti(C 2H 5O) 4 fraction.