Abstract
A competitive kinetic Monte Carlo (KMC) model for gas‐phase epitaxy growth of 4H‐SiC and 6H‐SiC crystals is established based on polytype transformation and the Monte Carlo algorithm. The competitive growth processes of the two polytypes are simulated, and the effect of deposition flux on the polytype competition is analyzed. The 4H‐SiC competitive growth is promoted by the increase in deposition rate, and the effect of the Si/C ratio on polytypic competition is suppressed by the high deposition rate. Moreover, competitive growth is affected by deposition flux by changing the ratio of diffusion rate to deposition rate.
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