Effect of depositing PCBM on perovskite-based metal–oxide–semiconductor field effect transistors**Project supported by the National Natural Science Foundation of China (Grant No. 51602241) and the China Postdoctoral Science Foundation (Grant No. 2016M592754).

Abstract

In this manuscript, the perovskite-based metal–oxide–semiconductor field effect transistors (MOSFETs) with phenyl-C61-butyric acid methylester (PCBM) layers are studied. The MOSFETs are fabricated on perovskites, and characterized by photoluminescence spectra (PL), x-ray diffraction (XRD), and x-ray photoelectron spectroscopy (XPS). With PCBM layers, the current–voltage hysteresis phenomenon is effetely inhibited, and both the transfer and output current values increase. The band energy diagrams are proposed, which indicate that the electrons are transferred into the PCBM layer, resulting in the increase of photocurrent. The electron mobility and hole mobility are extracted from the transfer curves, which are about one order of magnitude as large as those of PCBM deposited, which is the reason why the electrons are transferred into the PCBM layer and the holes are still in the perovskites, and the effects of ionized impurity scattering on carrier transport become smaller.