Effect of deep UV laser treatment on silicon‐doped Tin oxide thin film

Abstract

AbstractIn this paper, the effect of deep ultraviolet (UV) laser on physical and electrical properties of amorphous Silicon‐doped tin oxide (amorphous Si‐Sn‐O, a‐STO) thin films were studied. Surface morphology, thickness, crystallinity, and optical band gap of a‐STO thin films treated by laser were investigated. Results showed that the decrease of thickness and surface roughness of a‐STO thin films after deep UV laser treatment, and the films maintained an amorphous structure, which implied that the quality of a‐STO thin films were improved. The peak position of oxygen vacancy binding energy became lower; this is caused by an increase in oxygen vacancies resulting in a decrease in coordination number. And the oxygen vacancy content of the a‐STO thin films was increased after deep UV laser treatment. In addition, the optical band gap of a‐STO films was broaden after the deep UV laser treatment. It exploits a new application of deep UV laser in oxide semiconductor.